| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, in which an air gap for reducing effectively a parasitic capacity is formed with good controllability in a simple method. SOLUTION: An element separation region 2 and a channel region 3 are formed on a silicon substrate 1, and a gate electrode 5 is formed with a gate oxide film 4 in between. A silicon nitride film 7 and a silicon oxide film 8 are formed all over the substrate 1. In an etching-back step, first and second side walls 7A and 8A are formed. The first side wall 7A made of nitride film is partly etched by phosphorous to form a groove 9. Then, an oxide film 10 is formed all over thereon.
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