发明名称 ELECTRONIC DEVICE MANUFACTURING SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a system for manufacturing electronic devices by which plasma generated at excitation frequency such as VHF band or UHF band can be used in a large area in a reaction space and the throughput can be improved. SOLUTION: An insulating tube 14 which is made of soutache tube and whose length is variable is provided at some midpoint in a gas introducing piping 1. The length of the insulating tube 14 is adjusted in such a manner that the impedance|Z2|is larger than the impedance|Z1|in a reaction chamber 5. That is to say, the length of the insulating tube 14 as an impedance adjusting means is adjusted to change the conductance C1 of the insulating tube 14 to obtain an impedance adjusting capacitance C1 .
申请公布号 JPH1116843(A) 申请公布日期 1999.01.22
申请号 JP19970170771 申请日期 1997.06.26
申请人 SHARP CORP 发明人 ITO YASUHIKO;SAKAI OSAMU
分类号 H05H1/46;C23C16/50;C23C16/509;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):H01L21/205;H01L21/306 主分类号 H05H1/46
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