| 摘要 |
PROBLEM TO BE SOLVED: To embody a halftone mask for semiconductor production capable of preventing the transfer of the side lobe of the light transmitted through the mask to a resist while assuring the degree of freedom in mask design. SOLUTION: This halftone mask consists of a glass substrate 1, a halftone film 2 which is formed on this glass substrate 1 and has desired apertures 7, 8 and a light shielding film 12 which is formed in the prescribed regions on this halftone film 2. The regions where the light shielding film 12 is formed are the region corresponding to the regions where the side lobe appearing between the peaks 9 and 10 of the light transmitted through the apertures 7, 8 of the halftone film 2 attains the threshold light intensity T to sensitize the resist when the mask is not provided with the light shielding film 12. Since the transmitted light from the halftone film 2 between the apertures 7, 8 is shielded by the light shielding film 12, the light intensity of the side lobe 13 is lower than the threshold light intensity T and does not sensitize the resist any more. Since the process involves the mere provision of the prescribed regions on the halftone film 2 with the light shielding film 12, the degree of freedom in mask design may be assured. |
