MANUFACTURE OF SEMICONDUCTOR DEVICE HAVING SILICON FILM WITH DOME-SHAPED GRAINS

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device having a silicon film with dome-shaped grains which can be used as a capacitor electrode. SOLUTION: This method includes a step of forming an amorphous silicon film 11 doped with impurity by a PECVD(plasma enhanced chemical vapor deposition) method on a semiconductor substrate 1 at a low temperature of not higher than 400 deg.C and then patterning the film to form an amorphous silicon film pattern 5 doped with impurity. Then, the method includes a step of forming a silicon film 11 having dome-shaped grains on the surface of the amorphous silicon film pattern 5 doped with impurity. Thus, by forming a HSG-Si film 7 after forming the amorphous silicon film 11 doped with impurity by the PECVD method at a low temperature, a uniform HSG-Si film 7 can be formed.