| 摘要 |
PROBLEM TO BE SOLVED: To suppress the forward bias current of a p-n junction in a semiconductor element using interband tunnel conduction. SOLUTION: In the upper portion of a semiconductor substrate 11 made of p-type Si, p-type and n-type degenerated diffusion layers 12, 13 are formed oppositely to each other with a space between. On the interface between the n-type diffusion layer 13 and the semiconductor substrate 11, a tunnel barrier film 14 made of silicon oxide having a thickness of 1.5-5 nm is formed. Since the concentrations of the respective impurities of the p-type and n-type diffusion layers 13, 14 are at least 1×10<19> cm<-3> , the Fermi levels of the p-type and n-type diffusion layers 12, 13 are positioned respectively in their valence band and conduction band to bring the both into degenerated states. On the principal surface of the region of the semiconductor substrate 11 which is interposed between the p-type and n-type diffusion layers 12, 13, a gate electrode 16 made of high-concentration n-type polysilicon is formed via a gate insulation film 15. |
