| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor integrated circuit device having a DRAM. SOLUTION: In forming contact holes 28, 29 which are, respectively, connected to n-type semiconductor regions 19 of an MISFET for selecting memory cells, the thickness of a silicon nitride film 15 of the upper portion of a gate electrode 14A is made to be approximately 150 nm, and the thickness of a silicon nitride film 20 for covering the upper portion of an element isolation groove 5 is made to be approximately 20 nm. In this way, paring off of both the element isolation groove 5 and the silicon nitride film 15 is suppressed to the minimum. Thus, the element isolation groove 5 becomes hard to be pared, and further, the contact holes 28, 29 are prevented from being in contact with the gate electrodes 14A. |
