POSITIVE PHOTORESIST COMPOSITION FOR FORMING CONTACT HOLE AND METHOD FOR FORMING CONTACT HOLE

摘要

PROBLEM TO BE SOLVED: To provide the positive photoresist composition for forming the contact holes and the method for forming the contact holes capable of forming a contact hole pattern sufficiently matching a mask pattern small in dimples with respect to the technique for forming the contact holes using a phase shift method. SOLUTION: This positive photoresist comprises (A) an alkali-soluble resin, (B) a compound having a quinonediazido group, and (C) a solvent, and the component (B) contains at least one kind of the naphthoquinonediazidosulfonic acid ester of the polyphenol compound in which 4-6 benzene rings combine through each methylene chain with each other and the first benzene ring linking to the meta position of the next benzene ring and so forth and each benzene ring has a hydroxy group.