发明名称 MASK FOR PHOTORESIST AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To reduce a time for vacuuming and to prevent a resist pattern obtained by exposure from damage of the resist pattern, by forming a light shielding pattern and a projecting region of a specific height. SOLUTION: On a surface of a transparent substrate, a light shielding pattern and 1 μm or higher projecting region are formed. The height of the projecting area is desirably 1-30 μm, more desirably, 2-10 μm, further more desirably, 3-8 μm. When the substrate surface is brought into contact with a photo-sensitive layer for photo-resist, a space is produced between a mask surface and a photo- resist photo-sensitive layer surface on a non-projecting region area by providing the light shielding pattern and also the projecting part region on the surface of the substrate, therefore, the air existing inside comes off through the space, and the mask for photo-resist is brought into close and sufficient contact with the photo-sensitive material. And, a resist obtained from an exposed photo-sensitive layer by using this mask for photo-resist will not be deformed.
申请公布号 JPH1115131(A) 申请公布日期 1999.01.22
申请号 JP19970168900 申请日期 1997.06.25
申请人 FUJI FILM OORIN KK 发明人 MOROHOSHI KOICHI;KOJIKA AKIHIKO;KOBAYASHI KESANAO
分类号 G03F1/54;G03F1/68;H01L21/027 主分类号 G03F1/54
代理机构 代理人
主权项
地址