| 摘要 |
PROBLEM TO BE SOLVED: To maintain the optical loss at the joining section between a semiconductor laser and an optical waveguide to a minimum, to reduce the power consumption and to improve the reliability by burying a single semiconductor layer in the joining region of an end face emitting type semiconductor laser and an optical waveguide. SOLUTION: The semiconductor layer, which constitutes of an AlGaAs semiconductor laser 200, is grown on a GaAs substrate 100. Then, the layer is reactive ion beam etched in a vertical direction to the depth where the substrate 100 is reached. Then, employing an MOCVD method, a semiconductor layer (an optical waveguide) 300, which is constructed to sandwich an optical waveguide layer 301 from the top and bottom by optically enclosing layers 303 and 302, is grown. Then, the joining region of the laser 200 and the waveguide 300 is vertically etched, an AlGaAs layer 400 is buried and grown in this region. Lastly, the semiconductor layer grown in the laser 200 is removed, processed into a ridge shape, a lateral direction light enclosing process is conducted and an electrode mounting process is conducted for the laser 200 in order to obtain a waveguide type optical integrated circuit element. |
