发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To make data written in PROM's apparently reprogrammable by a method wherein, if two or more addresses identical to an inputted address exist in a 1st PROW cell array in which addresses corresponding to erroneous data of a mask ROM are stored, a data is selected and read out from a group of data stored in a 2nd memory cell array. SOLUTION: A data memory PROM cell array 5 and an address memory PROM array 9 are composed of single layer PROM's which can be manufactured by a manufacturing process identical to that of a mask ROM. A user can write data into the array with a PROM writer, etc. An address detection circuit 31 reads out a data stored in the data memory PROM cell array 5 if an inputted address signal is identical to an address stored in the address memory PROM cell array 9. If two or more identical addresses exist, a priority order circuit 32 selects a data written at the end preferentially. |
申请公布号 |
JPH1116388(A) |
申请公布日期 |
1999.01.22 |
申请号 |
JP19970350723 |
申请日期 |
1997.12.19 |
申请人 |
TOSHIBA CORP;TOSHIBA MICROELECTRON CORP |
发明人 |
SHIBATA NOBORU;KATO HIDEO;IWASE TAIRA;YANO KENJI |
分类号 |
G11C17/18;G11C16/04;G11C16/06;G11C29/00;G11C29/04;H01L21/8246;H01L27/112 |
主分类号 |
G11C17/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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