发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To make data written in PROM's apparently reprogrammable by a method wherein, if two or more addresses identical to an inputted address exist in a 1st PROW cell array in which addresses corresponding to erroneous data of a mask ROM are stored, a data is selected and read out from a group of data stored in a 2nd memory cell array. SOLUTION: A data memory PROM cell array 5 and an address memory PROM array 9 are composed of single layer PROM's which can be manufactured by a manufacturing process identical to that of a mask ROM. A user can write data into the array with a PROM writer, etc. An address detection circuit 31 reads out a data stored in the data memory PROM cell array 5 if an inputted address signal is identical to an address stored in the address memory PROM cell array 9. If two or more identical addresses exist, a priority order circuit 32 selects a data written at the end preferentially.
申请公布号 JPH1116388(A) 申请公布日期 1999.01.22
申请号 JP19970350723 申请日期 1997.12.19
申请人 TOSHIBA CORP;TOSHIBA MICROELECTRON CORP 发明人 SHIBATA NOBORU;KATO HIDEO;IWASE TAIRA;YANO KENJI
分类号 G11C17/18;G11C16/04;G11C16/06;G11C29/00;G11C29/04;H01L21/8246;H01L27/112 主分类号 G11C17/18
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