FERROELECTRIC MEMORY CELL AND FERROELECTRIC MEMORY DEVICE INCLUDING THE SAME

摘要

PROBLEM TO BE SOLVED: To raise the integration degree of a ferroelectric memory and also to enable ferroelectric memory cells to operate at a low voltage, by a method wherein word lines are respectively formed on the well regions of a transistor, and a selection line is formed of common types which are coupled with each other in the two ferroelectric memory cells. SOLUTION: Unit cells are separated from each other by a field oxide film 102 and, in two ferroelectric memory cells which are adjacent to an X-axis, drain regions 108 are coupled with one selection line 102. Unit ferroelectric memory cells formed along a Y-axis are coupled with each other through word lines formed on well regions 104 of a transistor. Accordingly, it becomes possible to raise the integration degree of a ferroelectric memory and, even if another switching transistor is not used, the operations of the ferroelectric memory cells are possible, the ferroelectric memory cells which can be operated at a low voltage can be realized, and the unit ferroelectric memory cells can be accessed randomly.