| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a cold cathode and its manufacturing method wherein an emitter is formed with a high density and a field emission current is large. SOLUTION: An auxiliary film 2 composed of silicon dioxide is formed on a substrate 1 composed of silicon. An opening 2a is provided in the auxiliary film 2 and an emitter 3 is formed in this opening 2a. The emitter 3 consist of silicon thin line parts 3a and metallic parts 3b on their ends. A gate electrode 4 is formed around the opening 2a. The emitter 3 is formed such that the auxiliary film 2 is formed on the substrate 1, thereafter that gold is evaporated thereon, and that the silicon thin line parts 3a are caused to grow by heating them to 440 deg.C in a silane gas atmosphere. By lowering heating temperature, formation density of molten alloy drops of gold with silicon can be made larger and their diameters can be made smaller and therefore formation density of the silicon thin line parts 3a can be made larger and their diameters can be made smaller.</p> |
