| 摘要 |
PROBLEM TO BE SOLVED: To improve photoelectric conversion efficiency by utilizing the light of a long wavelength which is lost inside the solar cells. SOLUTION: A defective layer v by ion implantation is formed between ptype diffused layers formed to an island shape on the opposite side of a light receiving surface of a p-type semiconductor substrate 100 having a low concentration. Elements used for ion implantation are either one or more containing at least silicon or germanium among hydrogen, silicon, germanium, fluorine, oxygen, carbon or the like containing constituent substances of the semiconductor substrate. |
