| 摘要 |
<p>A reflector plate (100) is provided for scattering radiant heat energy in a semiconductor processing reactor chamber to achieve uniform temperature across a substrate to be processed. The surface (104) is characterized by a plurality of adjoining depressions (106) with substantially no planar sections among the depressions. The width to depth ratio for the depressions averages over 3:1. Crests separating the depressions define an angle of greater than about 60°, thus providing a relatively smooth texture for the reflecting surface. The reflecting surface is thus easy to clean. A method of manufacturing the reflector plate comprises removing material from a planar metal surface by ball-end milling. The depth of each depression and degree of overlap with adjacent depressions can randomly vary within selected ranges. A highly specular finish is then provided on the stippled surface by gold electroplating.</p> |
