| 摘要 |
<p>An apparatus and method for slicing a workpiece (14), in particular, a polysilicon or single crystal silicon ingot (14), utilizing a diamond impregnated wire saw (12) in which either the workpiece (or ingot) is rotated, either continuously or reciprocally, about its longitudinal axis or the diamond wire saw (12) is rotated, either reciprocally or continuously, about the longitudinal axis of the workpiece as the diamond wire (12) is driven orthogonally to the longitudinal axis of the workpiece (14). When the relative rotation is continuous, the wire (12) is advanced from a position tangentially adjoining the outer diameter ('OD') of the ingot to a position tangential to its center or inner diameter ('ID'). When the rotation is reciprocating, the wire (12) is advanced from a position tangentially adjoining the outer diameter to a position through the workpiece. In both cases, the diamond wire (12) cuts through the workpiece (14) at a substantially tangential point to the cut instead of straight through up to the entire diameter of the piece and single crystal silicon ingots of 300 mm to 400 mm or more may be sliced into wafers relatively quickly, with minimal 'kerf' loss and less extensive follow-on lapping operations.</p> |
