Verfahren zur gezielten Herstellung von n-leitenden Bereichen in Diamantschichten mittels Ionenimplantation

摘要

The invention relates to the production of semiconductor elements made of diamond, diamond layers and diamond-like layers, which are doped using the ion implantation method and on which N- type conductive areas are also placed. According to the invention, silicium at a concentration of more than 0.1 atom % is implanted in the lateral and depth areas to be doped, in addition to the elements of the fifth main group known per se which are used in doping. The silicium can be implanted before or after the elements of the fifth main group are applied to the diamond substrate or in a step comprising both. When silicium is implanted after the ions of the elements of the fifth main group, regeneration can be carried out after each implantation or after the second implantation.