发明名称 |
Dynamischer Speicher mit wahlfreiem Zugriff mit Mittelspannungsgenerator zur Energieversorgungsunterbrechung beim Prüfbetrieb |
摘要 |
When a dynamic random access memory device is powered with an external power voltage (Vcc), a first intermediate voltage generator (14b) produces an intermediate voltage from the external power voltage for supplying to the counter electrodes of the storage capacitors (11 b) of memory cells and a precharge unit (13b), and the first intermediate voltage generator is replaced with a second intermediate voltage generator (14c) after the internal power voltage (Vint) becomes stable, wherein a switch transistor (16) blocks the counter electrodes and the precharge unit from the second intermediate voltage generator during a test operation on bit lines, thereby effectively screening out defective products. <IMAGE> |
申请公布号 |
DE69322433(D1) |
申请公布日期 |
1999.01.21 |
申请号 |
DE1993622433 |
申请日期 |
1993.04.27 |
申请人 |
NEC CORP., TOKIO/TOKYO, JP |
发明人 |
NANBA, YASUHIRO, C/O NEC CORPORATION, TOKYO, JP |
分类号 |
G11C11/401;G11C11/404;G11C11/407;G11C11/4074;G11C11/409;G11C29/00;G11C29/50;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):G11C29/00;G11C11/14;G11C5/14 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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