| 摘要 |
PROBLEM TO BE SOLVED: To contrive to enable a semiconductor device to have a structure, wherein a strong and high dielectric film can be protected from damage, which is inflicted on the strong and high dielectric film by hydrogen and water, by a method wherein insulative films are respectively held formed previously on the parts, which oppose to the sidewalls of a ferroelectric film, of a lower electrode. SOLUTION: Element isolation regions 102 are formed in a P-type silicon substrate 101, and, after ions are implanted in the substrate 101, a gate oxide film 103 is formed in the substrate 10 to deposit an N-type polysilicon film and a metal silicide film on the film 103, a gate 104 and a protective film 105 are formed on the film 103, impurities are ion-implanted in the substrate 101 using source and drain regions ss masks, and a first interlayer insulating film 201 is deposited on the entire surface. Then, a lower electrode 401 is deposited on the film 201 and insulative films 204 are respectively deposited on the parts, which oppose to the sidewalls of a ferroelectric film 402, of the electrode 401, a ferroelectric region is etched, the ferroelectric film 402 is deposited on the films 204 and is polished to make an upper electric 403 deposit on the film 402, the films 204 are etched so as to house a ferroelectric material in the interior between the films 204 and the electrode 401 is etched. As a result, ones to come into contact with the film 402 are the upper and lower electrodes and the films 204 under the sidewalls of the film 402 and the parts, which are soaked in an atmosphere from the outside, of the film 402 are eliminated. |
