| 摘要 |
<p>Silicon dioxide films have been deposited on a substrate disposed on a heated sample stage at temperatures from 40 °C to 250 °C by plasma enhanced chemical vapor deposition (PECVD), wherein tetramethylsilane (TMS) vapor used as silicon source gas is delivered under its own vapor pressure through a showerhead electrode into a capacitively coupled rf PECVD reactor.</p> |
