The circuit has a controllable resistance (14) connected to the MOSFET's (10) gate connection (G) and a protective device (12) connected between its drain (D) and source (S) connections to reduce the potential at the gate connection of the MOSFET in the even of failure. A temp. sensitive device (22) e.g. a bipolar transistor raises the potential drop between the gate connection and the source connection if an excess temp. occurs in the MOSFET. The temp. sensitive transistor is integrated inside the body of the MOSFET and is connected to the gate of the MOSFET.
