Ferroelectric memory device

摘要

It is an object of the invention to provide a method for generating a reference voltage by means of a sense amplifier in a ferroelectric memory device in a 1T1C type(One Transistor One Capacitor type). The directions of the polarizations of dummy cell DMC1 and DMC2 are set so that they are not inverted in case that data stored therein are read. Transistors T1 and T2 are added to the sense amplifier in order to make it be unbalanced, when a datum stored in a memory cell is read. In case that a datum stored in the memory cell is read, the transistor on the dummy cell side is on and that on the memory cell side is off. Witdths of channels of T1 and T2 are selected so that an apparent reference voltage is slightly higher than a voltage read on a bit line in case that the polarization of the dummy cell is not inverted. <IMAGE>