| 摘要 |
FIELD: scanning tunnel and nuclear microscopes. SUBSTANCE: method involves generation of first protection layer from silicon nitride on silicon substrate, deposition of local nitride mask on this layer and anisotropic etching of silicon in order to shape needle-shaped projection on substrate, removal of local nitride mask and first protection layer, deposition of silicon dioxide of at least 0.3 mcm on both sides of substrate, deposition of second protection layer from silicon nitride, local nitride mask and oxide masks on lower side of substrate, anisotropic etching of silicon on lower side of substrate to remove it completely on regions which are not protected by local nitride mask on lower side of substrate, removal of local nitride and oxide masks from lower side of substrate, deposition of layer from durable tense-free material of 0.2-5 mcm depth on lower side of substrate, for example, this may be layer of sequential deposition of films of titan nitride and silicon nitride with ratio of film depths of at least 1/100. Then method involves optical lithography forming of photoresist mask which depth is greater than height of needle-shaped projection, selective etching of silicon dioxide layer and durable tense-free layer from upper side of substrate, removal of photoresist mask, removal of silicon dioxide layer from upper side of substrate. EFFECT: manufacturing of cantilevers with increased sharpness of needle form material more durable than silicon, possibility to manufacture conducting durable cantilevers with increased sharpness of needle. 3 cl, 12 dwg
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