Ultra-small semiconductor devices and methods of fabricating and connecting said devices

摘要

Ultra-small semiconductor devices (20) and a method of fabrication including patterning the planar surface of a substrate (22) to form a pattern edge (23) (e.g. a mesa (24)) and consecutively forming a plurality of layers (25, 26, 27, 28, 29) of semiconductor material in overlying relationship to the pattern edge (23) so that a discontinuity is produced in the layers (25, 26, 27, 28, 29) and a first layer (25) on one side of the pattern edge (23) is aligned with and in electrical contact with a different layer (29) on the other side of the pattern edge (23).