| 摘要 |
FIELD: microelectronics, in particular, design of radiation-proof digital and analog-digital integral circuits. SUBSTANCE: method involves anode etching of heavily doped single-crystal p-type silicon substrate in solution of hydrofluoric acid, removing silicon oxide from porous layer surface by means of molecular silicon flux, epitaxy of semiconductor on surface of porous layer, opening junctions in epitaxial film and oxidization of porous layer under film. After anode etching silicon substrate with porous layer is washed in de-ionized water and subjected to anode oxidization in solution of hydrochloric acid, washing in de-ionized water once again and drying in oxygen. Epitaxy process may use pure element semiconductors or semiconductor compositions. Substrate material may be heavily doped single-crystal p-type silicon of technical purity. EFFECT: decreased baking of porous layer during heating, isolation of impurities in it and in substrate, decreased supply of pure silicon, possibility to use pure element semiconductors as well as semiconductor compositions. 2 cl, 12 dwg
|
