发明名称 |
Ferromagnetic tunnel junction, magnetoresistive element and magnetic head |
摘要 |
This invention is directed to a ferromagnetic tunnel junction, an MR element and a magnetic head. A ferromagnetic tunnel junction is constituted by sequentially laminating a first ferromagnetic film, an insulating film and a second ferromagnetic film. These are laminated on an appropriate insulating substrate. The present invention is characterized in that the barrier potential of the insulating film is set within a range of 0.5 to 3 eV. A ferromagnetic tunnel junction with which a high MR ratio can be achieved with good reproduction characteristics is provided.
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申请公布号 |
US5862022(A) |
申请公布日期 |
1999.01.19 |
申请号 |
US19970933347 |
申请日期 |
1997.09.19 |
申请人 |
TDK CORPORATION |
发明人 |
NOGUCHI, KIYOSHI;OIKE, TARO;ARAKI, SATORU;OHTA, MANABU;SANO, MASASHI |
分类号 |
G11B5/39;H01L43/08;(IPC1-7):G11B5/39;G11C11/00;H01L41/12 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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