发明名称 |
Insulated gate bipolar transistor |
摘要 |
An insulated gate bipolar transistor according to the present invention has a first and a second emitter regions. A diffusion region of the first conductive type is formed in the first emitter region of the second conductive type. The second emitter region has a region having a high concentration compared with the remaining portion of the second emitter region. The high concentration region is adjacent to the diffusion region and positioned towards the center of a first conductive type well. In addition, the junction depth of the high concentration region is similar to the diffusion region.
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申请公布号 |
US5861638(A) |
申请公布日期 |
1999.01.19 |
申请号 |
US19960760255 |
申请日期 |
1996.12.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
OH, KWANG-HOON |
分类号 |
H01L29/74;H01L29/739;H01L29/749;H01L29/78;(IPC1-7):H01L29/74 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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