发明名称 |
Method of forming robust interconnect and contact structures in a semiconductor and/or integrated circuit |
摘要 |
A conducting trench in a dielectric layer can function as both (a) a plurality of contacts and (b) an interconnect in a semiconductor device. The conducting trench may be made by depositing a conductor in a trough formed in a dielectric layer of the device.
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申请公布号 |
US5861676(A) |
申请公布日期 |
1999.01.19 |
申请号 |
US19960758223 |
申请日期 |
1996.11.27 |
申请人 |
CYPRESS SEMICONDUCTOR CORP. |
发明人 |
YEN, TING |
分类号 |
H01L21/768;(IPC1-7):H01L23/52 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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