发明名称 Method of forming robust interconnect and contact structures in a semiconductor and/or integrated circuit
摘要 A conducting trench in a dielectric layer can function as both (a) a plurality of contacts and (b) an interconnect in a semiconductor device. The conducting trench may be made by depositing a conductor in a trough formed in a dielectric layer of the device.
申请公布号 US5861676(A) 申请公布日期 1999.01.19
申请号 US19960758223 申请日期 1996.11.27
申请人 CYPRESS SEMICONDUCTOR CORP. 发明人 YEN, TING
分类号 H01L21/768;(IPC1-7):H01L23/52 主分类号 H01L21/768
代理机构 代理人
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