发明名称 |
Method for annealing a semiconductor |
摘要 |
A method for manufacturing a semiconductor device including preparing a multi-chamber system having at least first and second chambers, the first chamber for forming a film and the second chamber for processing an object with a laser light; processing a substrate in one of the first and second chambers; transferring the substrate to the other one of the first and second chambers; and processing the substrate in the other one of the chambers, wherein the first and second chambers can be isolated from one another by using a gate valve.
|
申请公布号 |
US5861337(A) |
申请公布日期 |
1999.01.19 |
申请号 |
US19950460688 |
申请日期 |
1995.06.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG, HONGYONG;KUSUMOTO, NAOTO |
分类号 |
C30B1/02;H01L21/20;(IPC1-7):H02L21/336 |
主分类号 |
C30B1/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|