| 摘要 |
Atomic hydrogen is mixed with a raw material gas such as disilane in the selective growth of epitaxial silicon using insulating film masks, so as to control facet formation at the end portion of the selectively grown film where the silicon film comes in contact with the insulating film sidewall. Adsorption of atomic hydrogen leads to hydrogen termination of the silicon surface which remarkably reduces the surface free energy, thereby eliminating anisotropy of surface free energy and forming a facet-free selective silicon epitaxial film. A selective epitaxial film sufficiently thick for shallow junction source/drain regions of MOSFETs can be formed under the selective silicon epitaxial growth condition, i.e., high substrate temperature (700 DEG C. or higher) and low disilane flow rate, with the flow rate of hydrogen set to 4 sccm or more, and at least 5% of said hydrogen gas being dissociated into atomic hydrogen. |
