发明名称 Plasma CVD device
摘要 A second electrode 20 having a container-like configuration defines a reaction space 29. A mounting portion 12 of a first electrode 10 and a workpiece W loaded on the mounting portion 12 are surrounded by the second electrode 20. A pair of auxiliary walls 27 project upwardly from a bottom wall 21 of the second electrode 20. The mounting portion 12 for the first electrode 10 is disposed in an arrangement area A defined by the auxiliary walls 27. The mounting portion 12 projects from upper end edges of the auxiliary walls 27.
申请公布号 US5861063(A) 申请公布日期 1999.01.19
申请号 US19960590471 申请日期 1996.01.23
申请人 SHOU, KENTARO 发明人 SHOU, KENTARO
分类号 C23C16/509;H01J37/32;(IPC1-7):H05H1/00;C23C16/00 主分类号 C23C16/509
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