| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target to prevent the breakage of the wiring pattern and to realize the highly reliable wiring pattern, and its manufacturing method. SOLUTION: A sputtering target 1 consists of aluminum alloy containing additive elements including at least Si, and the density of the crystalline particles of the additive element to be precipitated on a sptutter surface 2 is <=0.2 particle/100μm<2> . The manufacturing method of the sputtering target 1 comprises a first forging process where a billet consisting of aluminum alloy is forged, a first heat treatment process where the billet after the first forging process is heated to the temperature above the melting point of the additive element, a cooling process to cool the billet after the first heat treatment process, a second forging process to forge the billet after the cooling process, and the second heat treatment process where the billet after the second forging process is heated to the temp. not exceeding the melting point of the additive elements.
|
