| 摘要 |
The present invention relates to a method of forming a self-contact hole on a semiconductor substrate. A polysilicon layer is formed over a substrate. A photoresist is patterned on the polysilicon layer. Then an etching is performed to etch the polysilicon layer, and during the etch polymers are formed on the side wall the polysilicon layer and the photoresist. Using the polymer side wall spacer as a mask to formed an opening in the polysilicon layer. Subsequently, the photoresist and side wall spacer are removed. A opening which is smaller than the conventional one is formed, that will increase the accuracy of a contact hole alignment.
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