发明名称 |
Method for fabricating capacitors of a dynamic random access memory |
摘要 |
A method for fabricating capacitors of a DRAM by employing liquid-phase deposition. Since the working temperature required for performing liquid-phase deposition is low, the deposition process can be performed in the presence of the photoresist. This method comprises: filling the contact hole and covering the isolation layer with conductive layer; performing an etching process on the conductive layer by using photoresist and low-temperature spacer as mask; again performing an etching process on the conductive layer, to a desired depth by controlling the etching time and using the low-temperature spacer as mask; removing the low-temperature spacer for finally forming the lower electrode of a cylindrical capacitor.
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申请公布号 |
US5861331(A) |
申请公布日期 |
1999.01.19 |
申请号 |
US19980085490 |
申请日期 |
1998.05.27 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHIEN, SUN-CHIEH |
分类号 |
H01L21/02;H01L21/316;H01L21/3213;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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