发明名称 |
Semiconductor storage device |
摘要 |
A semiconductor storage device is provided with a storage circuit for a faulty address and a plurality of redundant word lines corresponding to the storage circuit. The storage circuit is adapted to store a faulty address required for selecting a redundant word line. The faulty address is compared with an address input at the time of memory access by a comparator. Using a coincidence signal produced from the comparator and a predetermined address signal contained in the input address, a defect relief circuit selects one of the redundant word lines in place of the faulty word line.
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申请公布号 |
US5862086(A) |
申请公布日期 |
1999.01.19 |
申请号 |
US19960701348 |
申请日期 |
1996.08.22 |
申请人 |
HITACHI LTD.;TEXAS INSTUMENTS INCORPORATED |
发明人 |
MAKIMURA, CHISA;SUZUKI, YUKIHIDE;SUKEGAWA, SHUNICHI;FUJIWARA, HIROYUKI;HIRA, MASAYUKI |
分类号 |
G11C11/401;G11C11/407;G11C29/00;G11C29/04;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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