发明名称 |
Etching method and apparatus |
摘要 |
Each of a pair of electrodes is provided in high-frequency power supply. A sample placed on the one of electrodes is etched by RIE (reactive ion etching) method. At the time, the power supply connected to the other electrode opposite to the sample is actuated first, and then the power supply of the one electrode on which the sample has been placed is actuated. And then the power supply connected to the other electrode is stopped. Therefore a bias voltage applied to the sample is gradually varied to suppress the abrupt application of a voltage to the sample.
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申请公布号 |
US5861103(A) |
申请公布日期 |
1999.01.19 |
申请号 |
US19960687968 |
申请日期 |
1996.07.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI, SHUNPEI;FUKADA, TAKESHI;SUZAWA, HIDEOMI |
分类号 |
C23F4/00;H01L21/00;H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):H01L21/00 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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