Halbleiterbauelement mit laserschmelzbarer Sicherung

摘要

In a laser-broken fuse (20) used in a memory redundancy technique, an aluminum wiring layer (18) is formed on an interlevel insulating film (16). A portion of the wiring layer (18) is selected to be broken to shut off conduction of the layer (18). A polysilicon-made heat member (14) is provided in the interlevel insulating film (16) at the place which is underneath the selected portion (32). The heat member (14) is located on a field insulating film (12). This heat member (14) generates heat by absorbing energy from a laser beam, and thermal-explodes in a sealed atmosphere so as to break the selected portion (32).