发明名称 PARALLEL PLATE STRUCTURE PROVIDED WITH PZT THIN-FILM BIMORPH AND METHOD OF FABRICATION THEREOF
摘要 A parallel plate structure (1) is provided with a pair of bimorph piezoelectric elements (2) and prismatic insulation spacers (3) inserted between the piezoelectric elements (2) at the upper and lower ends thereof for cementing the piezoelectric elements (2) together via the spacers (3). Each piezoelectric element (2) comprises a planar base material (4) of titanium, PZT thin films (5) formed on both sides of the base material (4) by the hydrothermal method, and electrode films (6) formed on the PZT thin films (5). The base material (4) is 20 mu m thick and the PZT thin films (5) are several mu m thick, while the aluminum electrode films (6) are several mu m thick.
申请公布号 WO9901901(A1) 申请公布日期 1999.01.14
申请号 WO1998JP02991 申请日期 1998.07.02
申请人 KABUSHIKI KAISHA TOKAI RIKA DENKI SEISAKUSHO;FUKUDA, TOSHIO;ARAI, FUMIHITO;IWATA, HITOSHI;ITOIGAWA, KOICHI 发明人 FUKUDA, TOSHIO;ARAI, FUMIHITO;IWATA, HITOSHI;ITOIGAWA, KOICHI
分类号 C30B7/10;C30B29/32;H01L41/09;H01L41/39;H03H3/02 主分类号 C30B7/10
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