发明名称 APPARATUS FOR EVALUATING METALIZED LAYERS ON SEMICONDUCTORS
摘要 An apparatus for characterizing multilayer samples is disclosed. An intensity modulated pump beam is focused onto the sample surface to periodically excite the sample. A probe beam is focused onto the sample surface within the periodically excited area. The power of the reflected probe beam is measured by a photodetector. The output of the photodetector is filtered and processed to derive the modulated optical reflectivity of the sample. Measurements are taken at a plurality of pump beam modulation frequencies. In addition, measurements are taken as the lateral separation between the pump and probe beam spots on the sample surface is varied. The measurements at multiple modulation frequencies and at different lateral beam spot spacings are used to help characterize complex multilayer samples. In the preferred embodiment, a spectrometer is also included to provide additional data for characterizing the sample.
申请公布号 WO9901747(A1) 申请公布日期 1999.01.14
申请号 WO1998US11869 申请日期 1998.06.08
申请人 THERMA-WAVE, INC. 发明人 OPSAL, JON;CHEN, LI
分类号 G01B11/06;G01N21/17;G01N21/21;G01N21/27;(IPC1-7):G01N21/17 主分类号 G01B11/06
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