| 发明名称 |
METHOD FOR RAPID THERMAL PROCESSING (RTP) OF A SILICON SUBSTRATE |
| 摘要 |
A method of rapid thermal processing (RTP) of a silicon substrate is presented, where a very low partial pressure of reactive gas is used to control etching and growth of oxides on the silicon surface. |
| 申请公布号 |
WO9901895(A1) |
申请公布日期 |
1999.01.14 |
| 申请号 |
WO1998EP03885 |
申请日期 |
1998.06.25 |
| 申请人 |
STEAG AST ELEKTRONIK GMBH |
发明人 |
LERCH, WILFRIED;NENYEI, ZSOLT;SOMMER, HELMUT |
| 分类号 |
H01L21/26;H01L21/28;H01L21/324 |
主分类号 |
H01L21/26 |
| 代理机构 |
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代理人 |
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