| 摘要 |
<p>The invention relates to a method and an apparatus for producing a thin film onto a substrate, in which method a substrate placed in a reaction space (1; 21) is subjected to alternately repeated surface reactions of at least two different reactants for the purpose of forming a thin film, according to which method said reactant are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (1), and said vapor-phase reactants are brought to react with the surface of the substrate (13) for the purpose of forming a solid-state thin film product on the substrate, and gaseous reaction products and any possible excess reactant are removed from the reaction space in a gas phase. According to the invention, the gas flow introduced into the reaction space is implemented by means of tree-like inflow piping (3) whose nozzle orifices (10, 11) are arranged in an essentially planar fashion such that the inflow piping is essentially perpendicular to the plane of the substrates (13).</p> |
