发明名称 |
Low inductance power semiconductor module |
摘要 |
The power module (1) includes several semiconductor power groups (2) and a cooling body (3). The power groups are located about both sides of the cooling body which has channels (7) supplied with cooling fluid. Both sides of the body also have substrates (8) of electrically insulating material with good thermal conducting properties, e.g. aluminium oxide. The semiconductor devices, e.g. thyristors, diodes etc. are surface mounted and the heat generated is dissipated into the fluid heat sink. The group mounting is made via a stack of low inductance conducting plates (4). <IMAGE> |
申请公布号 |
EP0688053(B1) |
申请公布日期 |
1999.01.13 |
申请号 |
EP19950201442 |
申请日期 |
1995.06.01 |
申请人 |
ASEA BROWN BOVERI AG |
发明人 |
BAYERER, REINHOLD, DR.;STOCKMEIER, THOMAS, DR. |
分类号 |
H01L23/473;H01L25/065;H01L25/07;H01L25/18;H02M7/00;(IPC1-7):H01L25/07 |
主分类号 |
H01L23/473 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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