| 摘要 |
The invention is embodied in a plasma reactor for processing a semiconductor wafer (61), the reactor having a pair of parallel capacitive electrodes (60,62) at the ceiling (54) and base (56) of the processing chamber (50), respectively, each of the capacitive electrodes (60,62) capacitively coupling RF power into the chamber (50) in accordance with a certain RF phase relationship between the pair of electrodes (60,62) during processing of the semiconductor wafer (61) for ease of plasma ignition and precise control of plasma ion energy and process reproducibility, and an inductive coil (74) wound around a portion of the chamber (50) and inductively coupling RF power into the chamber for independent control of plasma ion density. Preferably, in order to minimize the number of RF sources (72) while providing independent power control, the invention includes power splitting to separately provide power from a common source or sources to the pair of electrodes (60,62) and to the coil (74). <IMAGE> |
