Method of making integrated circuit capacitors

摘要

A magnesium doped metal oxide layer in an integrated circuit is made by providing a liquid precursor comprising a first metal, a second metal and magnesium, applying the precursor to a substrate, and treating the precursor to form said magnesium doped metal oxide layer on the substrate. In one embodiment the liquid precursor comprises a mixture of a BST solution and a dopant solution of magnesium carboxylate. The precursor is spun (P45) on the substrate, for example a first electrode, dried (P46) at 400 DEG C for 2 minutes then annealed (P47) at 750 DEG C to 800 DEG C for about an hour to form a BST layer accurately doped with magnesium.