| 摘要 |
PROBLEM TO BE SOLVED: To adjust sensitivity in a subsequent process and to suppress sensitivity irregularity by a method, wherein a polysilicon film is grown uniformly on the beam part an its peripheral part of a semiconductor substrate. SOLUTION: A semiconductor accelerometer sensor 20 is mounted on a holding jig which is installed at a member for gas cutoff, and it is installed inside the reaction container of a normal-pressure chemical vapor deposition(CVD) apparatus. At this time, the semiconductor accelerometer 20 is held in such a way that the main flow direction of a source gas is parallel with the surface of the semiconductor accelerometer 20 and that the main flow direction is at right angles to a direction in which the beam part 9 and the bell part 4 of a semiconductor substrate are connected. Then, monosilane gas is supplied to the reaction container of the normal-pressure CVD apparatus, a temperature inside the reaction container is held at about 650 deg.C for about three hours, and a polysilicon film 10 is grown uniformly on the beam part 9 and its peripheral part. Thereby, it is possible to obtain the semiconductor accelerometer sensor 20 whose sensitivity variation is small. |
