发明名称 Method for wet etching and device used therein
摘要 A method of preventing the occurrence of side etch in a wet etching method to form a circuit layer which meets the requirement of a high circuit density. First, etching is partially done using etchant having a relatively high etching rate with a spray pressure of a relatively small value, then etching is carried out using a second etchant having a relatively low etching rate with a high spray pressure. In an optional finishing step, etchant containing abrasive is used.
申请公布号 US5858257(A) 申请公布日期 1999.01.12
申请号 US19960745583 申请日期 1996.11.07
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 NAITOH, YOSHIYUKI
分类号 C23F1/00;C23F1/02;C23F1/08;H01L21/306;H05K3/04;H05K3/06;(IPC1-7):C23F1/00 主分类号 C23F1/00
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