发明名称 |
High-voltage isolated high output impedance NMOS |
摘要 |
A semiconductor transistor device includes a first doped region 34 of a first conductivity type; a second doped region 30 of the first conductivity type formed at the surface of the first doped region 34, the second doped region 30 has a higher doping concentration than the first doped region 34; a source region 24 of a second conductivity type formed at the surface of the second doped region 30; a lightly doped drain region 28 of the second conductivity type surrounding the first doped region 34, the lightly doped drain region 28 has a lower doping concentration than the source region 24, the lightly doped drain region 28 is spaced apart from the second doped region 30; a buried layer 40 of the second conductivity type below the first doped region 34 and coupled to the lightly doped drain region 28; and a gate 32 overlying and spaced apart from the first doped region 34 and the second doped region 30.
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申请公布号 |
US5859457(A) |
申请公布日期 |
1999.01.12 |
申请号 |
US19970847461 |
申请日期 |
1997.04.24 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
THIEL, FRANK L.;CORSI, MARCO |
分类号 |
H01L21/336;H01L21/8238;H01L21/8249;H01L29/10;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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