| 摘要 |
PROBLEM TO BE SOLVED: To shorten the production line unit process time and improve the production yield when forming a transparent conductive film. SOLUTION: A photoresist 11 is applied onto an insulating base 11 and patterned so as to be left in the part other than a desired ITO(indium tin oxide) pattern, and an ITO 12 is applied to the resulting base by sputtering to uniformly form a film on the base. The ITO 12 is wet-etched to lift off the resist 11, whereby the patterning of the ITO 12 is completed. Since the resist is preliminarily patterned in the part requiring no ITO 12, the etching residue, even if present on the surface of the insulating base 10, can be lifted off and removed together with the resist, so that no residue is generated in the part requiring no ITO 12. |
