| 摘要 |
PROBLEM TO BE SOLVED: To provide a dielectric memory and its manufacturing method, wherein the reductions of its reliability and yield which are generated due to conductive materials stuck or deposited on the sidewall of its ferroelectric thin film are prevented. SOLUTION: Forming a gate insulation film 2 and a first lower electrode 3 on a channel region 6 of a silicon substrate 1, an interlayer insulation film 7 is so formed on the silicon substrate 1 as to cover with it the first lower electrode 3 and the gate insulation film 2. Forming a buffer layer 8 on the interlayer insulation film 7, a contact hole 9 is formed in the buffer layer 8 and the interlayer insulation film 7 is present on the first lower electrode 3, to form a connection layer 10 and a second lower electrode 12 in the contact hole 9. Then, a ferroelectric thin film 13 and an upper electrode 14 are formed successively on the buffer layer 8, so that the ferroelectric thin film 13 is contacted with the top surface of the second lower electrode 12. |
