| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device equipped a capacitance element which enables full increase in capacitance value, even when it is highly integrated. SOLUTION: This device has a P-type silicon substrate 11, an N-type embedded layer 18 dividing the substrate 11 into an upper region 11A and a lower region 11B, a trench 12 formed to penetrate the N-type embedded layer 18 from the surface of the substrate 11 to the lower region 11B, and a storage electrode 15 formed inside of the trench 12. This storage electrodes 15 forms an N-type inversion layer using the N-type embedded layer 18 as a source of carrier, in the P-type lower region 11B by a field effect. The N-type inversion layer constitutes a capacitor, together with the storage electrode 15. |
