| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which restrains the formation of voids in an interlayered insulating film or the like layer higher than a cylindrical electrode and enables manufacture of a semiconductor device at a high yield. SOLUTION: After the portions of polycrystalline silicon films 13, 15, 17 corresponding to the inner side of a cylindrical storage node electrode to be formed are etched, portions of polycrystalline silicon films 13, 17, 32 corresponding to the outer side of the storage node electrode are etched. Therefore, the inner side surface of the storage node electrode is an inclined surface which closer it approaches to the axial center of the cylinder, closer it approaches to the bottom surface, and the outer side surface is an inclined surface which becomes farther from the axial center of the cylinder the closer it approaches to the bottom surface. Thus, void is formed neither in cylindrical capacitance elements 34, nor between the capacitance elements 34. |
